Federico Izraelevitch

The ionization efficiency for silicon is plotted as a function of nuclear recoil energy. The black line and dots with error bars show the best measurements to date. The solid red line shows our fit to preliminary new data, from 2 to 20 keV. The dashed lines display the 1 sigma error bands of a single parameter χ2 fit to the model (developed by Lindhard, et al, in 1963). In our next run we expect these errors, for points every…